絲?。?a target="_blank" title="Marking" href="/4466/marking.html">4466；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

文件：127.82 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體

絲印：4468；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V I

文件：147.82 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體

絲?。?a target="_blank" title="Marking" href="/4466/marking.html">4466；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

文件：1.42012 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/4466/marking.html">4466；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

文件：1.47095 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/446lwf/marking.html">446LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFD5C446NLWF ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free an

文件：233.79 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/446nwf/marking.html">446NWF；Package：DFN8；Power MOSFET 40 V, 2.9 m, 127 A, Dual N??hannel

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFD5C446NWF ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and

文件：293.18 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/4460/marking.html">4460；Package：DFN3333-8L；60V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V, ID@6A

文件：931.41 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/4460/marking.html">4460；Package：DFN3333-8L；60V N-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@10V, ID@6A

文件：811.74 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/4463/marking.html">4463；Package：DFN3333-8L；60V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON) , VGS@-10V, ID@-6A

文件：568.42 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/4463/marking.html">4463；Package：DFN3333-8L；60V P-Channel Enhancement Mode MOSFET

Features ? RDS(ON), VGS@-10V, ID@-6A

文件：563.93 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂