P-Channel 30-V (D-S) MOSFET

文件：1.8467 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?strong>4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Vos =-30Vio=-9A @ Ros(on = 20m@Ves=10V @ Ros(on = 35mO@Ves=4.5V

文件：2.88112 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | @ Vos=-30Vjo= 9A | ? Rosczmogesmioy | ? Ros(Ov=35mO@Ves=4.5V |

文件：2.886 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

P-Channel Enhancement Mode Power MOSFET

Description The 4435B uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features ● VDS = -30V RDS

文件：3.42716 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

P-Channel PowerTrench? MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：288.78 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：69.93 Kbytes 頁數(shù)：4 Pages

A-POWER

富鼎先進電子