Double Coated Foam Tape

文件：45.03 Kbytes 頁(yè)數(shù)：2 Pages

3M

N-Channel 30-V (D-S) MOSFET

文件：1.00305 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

High Current Inductive Charge Kit - 5V @ 1.3A max

文件：1.05206 Mbytes 頁(yè)數(shù)：3 Pages

ADAFRUIT

絲印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.21507 Mbytes 頁(yè)數(shù)：4 Pages

KEXIN

科信電子

絲?。?strong>4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 頁(yè)數(shù)：4 Pages

KEXIN

科信電子

絲?。?strong>4430；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430

文件：284.28 Kbytes 頁(yè)數(shù)：5 Pages

AOSMD

萬國(guó)半導(dǎo)體

絲?。?strong>4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.21507 Mbytes 頁(yè)數(shù)：4 Pages

KEXIN

科信電子

絲印：4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 頁(yè)數(shù)：4 Pages

KEXIN

科信電子

包裝：散裝 類別：創(chuàng)客/DIY，教育 教學(xué)套件 描述：INDUCTIVE CHARGE KIT 5V 1.3A MAX

ADAFRUIT

Inductive Sensor – Monitoring Kit for Power Clamps

Features ■Compact power clamp monitoring KS26 with two sensors and LEDs ■Active face, radial ■Plastic, PBT‐GF20‐V0, black ■Mounting holes with metal sleeves ■Cable: PUR ■Resistant to magnetic fields (weld-resistant), for DC and AC fields ■Acc. to standard EN 60947‐5‐2 ■Acc. to standard E

文件：169.03 Kbytes 頁(yè)數(shù)：2 Pages

TURCKTurck, Inc.

圖爾克德國(guó)圖爾克集團(tuán)公司