EMI/RFI Cable Sealing Backshell

文件：97.2 Kbytes 頁數(shù)：2 Pages

GLENAIR

EMI/RFI Cable Sealing Backshell

文件：97.2 Kbytes 頁數(shù)：2 Pages

GLENAIR

EMI/RFI Cable Sealing Backshell

文件：97.2 Kbytes 頁數(shù)：2 Pages

GLENAIR

EMI/RFI Cable Sealing Backshell

文件：97.2 Kbytes 頁數(shù)：2 Pages

GLENAIR

EMI/RFI Cable Sealing Backshell

文件：103.14 Kbytes 頁數(shù)：2 Pages

GLENAIR

EMI/RFI Cable Sealing Backshell

文件：103.14 Kbytes 頁數(shù)：2 Pages

GLENAIR

EMI/RFI Cable Sealing Backshell

文件：103.14 Kbytes 頁數(shù)：2 Pages

GLENAIR

絲?。?a target="_blank" title="Marking" href="/4430/marking.html">4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.21507 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/4430/marking.html">4430；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON)

文件：1.80181 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲印：4430；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430

文件：284.28 Kbytes 頁數(shù)：5 Pages

AOSMD

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