Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Chrome-plated brass ■AC 2-wire, 20…250 VAC ■DC 2-wire, 10…300 VDC ■NO contact ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that in

文件：340.56 Kbytes 頁數(shù)：3 Pages

TURCKTurck, Inc.

圖爾克德國圖爾克集團公司

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Chrome-plated brass ■AC 2-wire, 20…250 VAC ■DC 2-wire, 10…300 VDC ■NO contact ■1/2 connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that inter

文件：349.31 Kbytes 頁數(shù)：3 Pages

TURCKTurck, Inc.

圖爾克德國圖爾克集團公司

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30 ■AC 2-wire, 20…250 VAC ■DC 2-wire, 10…300 VDC ■NC contact ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that int

文件：392.35 Kbytes 頁數(shù)：3 Pages

TURCKTurck, Inc.

圖爾克德國圖爾克集團公司

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30 ■AC 2-wire, 20…250 VAC ■DC 2-wire, 10…300 VDC ■NC contact ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that int

文件：394.62 Kbytes 頁數(shù)：3 Pages

TURCKTurck, Inc.

圖爾克德國圖爾克集團公司

Inductive Sensor

Features ■Threaded barrel, M18 x 1 ■Plastic, PA12‐GF30 ■AC 2-wire, 20…250 VAC ■DC 2-wire, 10…300 VDC ■NC contact ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that int

文件：394.46 Kbytes 頁數(shù)：3 Pages

TURCKTurck, Inc.

圖爾克德國圖爾克集團公司

HEYClean? Brass Pressure Equalization and Drain Plugs

文件：152.36 Kbytes 頁數(shù)：1 Pages

HEYCO

絲印：4350SPN；Package：SO8；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：730.36 Kbytes 頁數(shù)：19 Pages

NEXPERIA

安世

絲印：4350SS；Package：SO8；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：696.38 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/4350x/marking.html">4350X；Package：SOT-89；NPN Transistor

文件：2.29487 Mbytes 頁數(shù)：4 Pages

PJSEMI

平晶半導體

兼容激光芯片

Print-Rite

天威