絲印：41；Package：SC74；LED Driver

1.1 Features ? LED drive current preset to 10 mA ? Continuous output current up to 150 mA with an external resistor ? Easy paralleling of drivers to increase current ? Supply voltage up to 40 V ? Low side current control ? Digital PWM input up to 10 kHz frequency (BCR 421U E6327) ? Up to 1

文件：1.48864 Mbytes 頁數(shù)：26 Pages

INFINEON

英飛凌

絲?。?strong>41；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 頁數(shù)：6 Pages

WTE

Won-Top Electronics

絲印：41；Package：fSM；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

絲?。?strong>41；Package：SOT666；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current capability IC and ICM ?

文件：251.89 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：101.42 Kbytes 頁數(shù)：14 Pages

PHI

PHI

絲?。?strong>41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：166.98 Kbytes 頁數(shù)：14 Pages

恩XP

絲?。?strong>41；Package：SOT416；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver.

文件：403.41 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>41；Package：SOT416；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver.

文件：403.43 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>41；Package：SOT23；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver.

文件：404.49 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>41；Package：SOT23；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES ?Built-in bias resistors ?Simplified circuit design ?Reduction of component count ?Reduced pick and place costs. APPLICATIONS ?General purpose switching and amplification ?Inverter and interface circuits ?Circuit driver. DESCRIPTION NPN resistor-equipped transistor (see “Simplif

文件：404.47 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世