HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES

FEATURES ? ZENER VOLTAGE 12.4V to 200V ? TEMPERATURE COEFFICIENT RANGE: 0.005/°C to 0.002/°C

文件：78.45 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES 5

? 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5 ? TEMPERATURE COMPENSATED ZENER REFERENCE DIODES ? EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005/°C AND 0.002/°C ? HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE

文件：50.99 Kbytes 頁數(shù)：2 Pages

CDI-DIODE

HIGH VOLTAGE DIODES

FEATURES ? ZENER VOLTAGE 12.4V to 200V ? TEMPERATURE COEFFICIENT RANGE: 0.005/°C to 0.002/°C

文件：378.73 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Shorty Snap Rivets

文件：108.31 Kbytes 頁數(shù)：1 Pages

HEYCO

包裝：散裝 類別：電纜組件 套管 - 音頻電纜 描述：3.5MM STEREO MALE/MALE CABLES -

ADAFRUIT

Hex inverter

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

文件：48.08 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

HEX INVERTER

DESCRIPTION The HCC4069UB (extended temperature range) and HCF4069UB (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4069UB consists ofsix COS/MOS in verter circuits. Thisde

文件：283.24 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Inverter Circuits

General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption, high noise immunity, and symmetric controlled rise and fall times. This device is intended for all general pu

文件：78.82 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

文件：171.8 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Hex Inverter

Hex Inverter

文件：59.55 Kbytes 頁數(shù)：6 Pages

HITACHIHitachi Semiconductor

日立日立公司