絲?。?strong>402；Package：SOT363；NP-Channel Enhancement Mode MOSFET

Features Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Halogen free

文件：2.87529 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>402；Package：SOT-26；LED Drive Application.

文件：156.44 Kbytes 頁數(shù)：3 Pages

FS

絲?。?strong>402；Package：WCSP6E；External FET Driver IC

文件：532.35 Kbytes 頁數(shù)：13 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/402xy/marking.html">402XY；Package：SOT23-3L；Transient Voltage Suppressing Device For ESD/Transient Protection

Features
ESD Protect for 2 Lines with Unidirectional
ESD Protect for 1 Line with Bidirectional
Provide ESD protection for a line to IEC 61000-4-2 (ESD) ±26kV (air) IEC 61000-4-2 (ESD) ±20kV (contact) IEC 61000-4-4 (EFT) 60A (5/50ns)
Suitable for, 12V and below, operating voltage ap

文件：212.32 Kbytes 頁數(shù)：8 Pages

AMAZING

晶焱科技

絲?。?a target="_blank" title="Marking" href="/4021sn/marking.html">4021SN；Package：SO8；20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：854.4 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/4021sp/marking.html">4021SP；Package：SO8；20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High col

文件：1.08979 Mbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/4021spn/marking.html">4021SPN；Package：SO8；20 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：874.03 Kbytes 頁數(shù)：20 Pages

NEXPERIA

安世

絲印：40200S；Package：SOIC；WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER

1FEATURES ? Input Voltage Range 5.5 V to 52 V ? Output Voltage (700 mV to 87% VIN) ? 200-mA Internal P-Channel FET Driver ? Voltage Feed-Forward Compensation ? Undervoltage Lockout ? Programmable Fixed-Frequency (35 kHz to 500 kHz) Operation ? Programmable Short-Circuit Protection ? H

文件：995.86 Kbytes 頁數(shù)：50 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/40200s/marking.html">40200S；Package：SOIC；WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER

1FEATURES ? Input Voltage Range 5.5 V to 52 V ? Output Voltage (700 mV to 87% VIN) ? 200-mA Internal P-Channel FET Driver ? Voltage Feed-Forward Compensation ? Undervoltage Lockout ? Programmable Fixed-Frequency (35 kHz to 500 kHz) Operation ? Programmable Short-Circuit Protection ? H

文件：995.86 Kbytes 頁數(shù)：50 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/40200s/marking.html">40200S；Package：SOIC；WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER

1FEATURES ? Input Voltage Range 5.5 V to 52 V ? Output Voltage (700 mV to 87% VIN) ? 200-mA Internal P-Channel FET Driver ? Voltage Feed-Forward Compensation ? Undervoltage Lockout ? Programmable Fixed-Frequency (35 kHz to 500 kHz) Operation ? Programmable Short-Circuit Protection ? H

文件：995.86 Kbytes 頁數(shù)：50 Pages

TI

德州儀器