絲印：4003；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 33mΩ @ VGS=10V(Typ) RDS(ON) = 52mΩ @ VGS=4.5V(Typ

文件：686.47 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/4003a/marking.html">4003A；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 32mΩ @ VGS=10V(Typ) RDS(ON) = 43mΩ @ VGS=4.5V(Ty

文件：701.61 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

POWER DIVIDERS - THREE WAY, 1 TO 18 GHZ

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