RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES ? Low VDD Use : (VDS = 3.5 V) ? Driving Battery ? Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) ? High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) ? Suitable for uses as RF amplifier in UHF TV tuner. ? Automatically Mounting : Embossed Type Taping ? Small Package : 4 Pins Sup

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NEC

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絲?。?a target="_blank" title="Marking" href="/u1g/marking.html">U1G；MOS FIELD EFFECT TRANSISTOR

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES ? Low VDD Use : (VDS = 3.5 V) ? Driving Battery ? Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) ? High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) ? Suitable for uses as RF

文件：259.829 Kbytes 頁數：10 Pages

RENESAS

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