3 Amps, 900 Volts N-CHANNEL POWER MOSFET

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絲?。?a target="_blank" title="Marking" href="/3n900/marking.html">3N900；Package：TO-251；N-Channel ENHANCEMENT MODE MOSFET

Features Low Crss Low gate charge Fast switching Improved ESD capability 100% Avalanche Tested ROHS compliant Halogen-free Improved dv/dt capability

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絲印：3N900；Package：TO-252；N-Channel ENHANCEMENT MODE MOSFET

Features Low Crss Low gate charge Fast switching Improved ESD capability 100% Avalanche Tested ROHS compliant Halogen-free Improved dv/dt capability

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3A, 900V N-CHANNEL POWER MOSFET

The UTC 3N90-E provides excellent RDS(ON), low gate chargeand operation with low gate voltages. This device is suitable foruse as a load switch or in PWM applications. ? RDS(ON)<4.8Ω @VGS=10 V\n? Fast Switching Capability\n? Avalanche Energy Specified\n? Improved dv/dt Capability, High Ruggedness;

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3 Amps, 900 Volts N-CHANNEL POWER MOSFET

The UTC?3N90Z provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? RDS(ON)=4.1? @VGS=10 V \n? Ultra Low Gate Charge ( typical 22.7 nC )?\n? Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF ) \n? Fast Switching Capability \n? Avalanche Energy Specified \n? Improved dv/dt Capability, High Ruggedness;

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