3A, 650V N-CHANNEL POWER MOSFET

文件：399.36 Kbytes 頁數(shù)：8 Pages

UTC

友順

Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.07621 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

3A ,?650V?N-CHANNEL POWER MOSFET

The UTC 3N65A?is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications in power ? RDS(ON) = 3.8 ? @VGS = 10V \n? Ultra low gate charge ( typical 10nC )?? \n? Low reverse transfer capacitance ( CRSS = typical 5.5pF ) \n? Fast switching capability \n? Avalanche energy specified \n? Improved dv/dt capability, high ruggedness;

UTC

友順

N-CHANNEL POWER MOSFET

文件：382.79 Kbytes 頁數(shù)：8 Pages

UTC

友順

3A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N65K is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching application

文件：396.26 Kbytes 頁數(shù)：8 Pages

UTC

友順

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N65K-MK is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat

文件：239.17 Kbytes 頁數(shù)：7 Pages

UTC

友順