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首頁(yè) >3N65>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
3N65KL-TND-R	文件：239.17 Kbytes Page：7 Pages	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N65K-MK is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat 文件：239.17 Kbytes 頁(yè)數(shù)：7 Pages	UTC 友順	UTC
3N65K-MK	文件：239.17 Kbytes Page：7 Pages	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 3N65K-MK is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat 文件：239.17 Kbytes 頁(yè)數(shù)：7 Pages	UTC 友順	UTC
3N65K-MK4	文件：210.67 Kbytes Page：6 Pages	N-CHANNEL POWER MOSFE DESCRIPTION The UTC 3N65K-MK4 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applica 文件：210.67 Kbytes 頁(yè)數(shù)：6 Pages	UTC 友順	UTC
3N65L-TA3-T	文件：399.36 Kbytes Page：8 Pages	3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications 文件：399.36 Kbytes 頁(yè)數(shù)：8 Pages	UTC 友順	UTC
3N65L-TA3-T	文件：1.08665 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08665 Mbytes 頁(yè)數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
3N65L-TF1-T	文件：399.36 Kbytes Page：8 Pages	3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications 文件：399.36 Kbytes 頁(yè)數(shù)：8 Pages	UTC 友順	UTC
3N65L-TF3-T	文件：399.36 Kbytes Page：8 Pages	3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications 文件：399.36 Kbytes 頁(yè)數(shù)：8 Pages	UTC 友順	UTC
3N65L-TM3-R	文件：1.0773 Mbytes Page：9 Pages	N-Channel 650 V (D-S) Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.0773 Mbytes 頁(yè)數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
3N65L-TM3-R	文件：399.36 Kbytes Page：8 Pages	3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications 文件：399.36 Kbytes 頁(yè)數(shù)：8 Pages	UTC 友順	UTC
3N65L-TN3-R	文件：1.07622 Mbytes Page：9 Pages	Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.07622 Mbytes 頁(yè)數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI

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技術(shù)參數(shù)

Vdss(V)：
650
Vgss(V)：
30
Id(A)：
3
Package：
TO251

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市豪邁興電子有限公司	3N65	MOT	24+	CAN4	8985	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢(xún)價(jià)
深圳市億智騰科技有限公司	3N65	MOT	24+	CAN4	6540	原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún)	詢(xún)價(jià)
艾睿（深圳）半導(dǎo)體有限公司	3N65027	ON/安森美	2447	QSOP20	100500	一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	3N65KL-TF	UTC/友順	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	3N65KL-TF	UTC/友順	2022+	TO-220F	530	原廠代理終端免費(fèi)提供樣品	詢(xún)價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	3N65L-TN3		23+	TO-252	86462	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳	詢(xún)價(jià)
深圳市躍創(chuàng)芯科技有限公司	3N65ZG-TF3-T	UTC/友順	2022+	TO-220F	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝假一罰十	詢(xún)價(jià)
深圳龐田科技有限公司	3N65G-CB-TF1-T	UTC/友順	2023+	TO-220F1	50000	AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	3N65L	UTC/友順	23+	TO-252	6800	專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨	詢(xún)價(jià)
深圳市宏捷佳電子科技有限公司	3N65L	UTC	25+	TO-252	12300	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢(xún)價(jià)

更多3N65供應(yīng)商更新時(shí)間2026-1-20 14:03:00

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