絲印：3N6；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 頁數(shù)：17 Pages

TOSHIBA

東芝

絲?。?strong>3N6；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 頁數(shù)：17 Pages

TOSHIBA

東芝

絲印：3N6；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

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TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/3n65m6/marking.html">3N65M6；Package：DPAK；N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Applications ? Switching applications Description The new MDmesh M6 technology incorporates the most recent advancements to the wel

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STMICROELECTRONICS

意法半導體

N-CHANNEL POWER MOSFET

DESCRIPTION 3N60 3N65 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

文件：648.61 Kbytes 頁數(shù)：7 Pages

ZSELEC

淄博圣諾

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

文件：162.16 Kbytes 頁數(shù)：8 Pages

UTC

友順

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app

文件：382.84 Kbytes 頁數(shù)：8 Pages

UTC

友順

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on state voltage drop

文件：189.33 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

文件：156.22 Kbytes 頁數(shù)：10 Pages

INTERSIL

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app

文件：382.84 Kbytes 頁數(shù)：8 Pages

UTC

友順