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          首頁 >3N50>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          3N50KL-TMS2-T

          N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

          DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

          文件:297.51 Kbytes 頁數(shù):7 Pages

          UTC

          友順

          3N50KL-TMS4-T

          N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

          DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

          文件:297.51 Kbytes 頁數(shù):7 Pages

          UTC

          友順

          3N50KL-TMS-T

          N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

          DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

          文件:297.51 Kbytes 頁數(shù):7 Pages

          UTC

          友順

          3N50KL-TN3-R

          N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

          DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

          文件:297.51 Kbytes 頁數(shù):7 Pages

          UTC

          友順

          3N50KL-TND-R

          N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

          DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

          文件:297.51 Kbytes 頁數(shù):7 Pages

          UTC

          友順

          3N50K-MK

          N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

          DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

          文件:297.51 Kbytes 頁數(shù):7 Pages

          UTC

          友順

          3N50L-TN3-R

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

          文件:1.07624 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          3N50-TO-3

          isc N-Channel MOSFET Transistor

          ? FEATURES ? Drain Current ID= 3A@ TC=25℃ ? Drain Source Voltage- : VDSS= 500V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) ? Fast Switching ? APPLICATIONS ? Switching power supplies,converters,AC and DC motor controls

          文件:161.35 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          3N50Z

          3A, 500V N-CHANNEL POWER MOSFET

          DESCRIPTION The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

          文件:178.84 Kbytes 頁數(shù):6 Pages

          UTC

          友順

          3N50Z

          N-Channel 650 V (D-S) Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

          文件:1.07845 Mbytes 頁數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          技術(shù)參數(shù)

          • Vdss(V):

            500

          • Vgss(V):

            30

          • Id(A):

            3

          • Package:

            TO-220F/TO-252

          供應(yīng)商型號品牌批號封裝庫存備注價格
          TOSHIBA
          12+
          TO-252
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
          詢價
          PHI
          23+
          2800
          正品原裝貨價格低
          詢價
          24+
          TO-3
          10000
          詢價
          UTC/友順
          2022+
          10
          全新原裝 貨期兩周
          詢價
          UTC/友順
          2022+
          TO-220F
          32500
          原廠代理 終端免費(fèi)提供樣品
          詢價
          UTC/友順
          23+
          TO-220F
          79999
          原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
          詢價
          UTC/友順
          2022+
          TO-251
          30000
          進(jìn)口原裝現(xiàn)貨供應(yīng),絕對原裝 假一罰十
          詢價
          U
          23+
          TO-220F
          8400
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價
          24+
          N/A
          56000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          SJK
          24+
          con
          35960
          查現(xiàn)貨到京北通宇商城
          詢價
          更多3N50供應(yīng)商 更新時間2026-1-20 9:04:00
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