絲?。?strong>3N；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? High switching speed: trr ≤ 50 ns ? Low leakage current ? High reverse voltage

文件：228.46 Kbytes 頁(yè)數(shù)：10 Pages

NEXPERIA

安世

絲印：3N；Package：DFN1006BD-2；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? High switching speed: trr ≤ 50 ns ? Low leakage current ? High reverse voltage

文件：228.69 Kbytes 頁(yè)數(shù)：10 Pages

NEXPERIA

安世

絲?。?strong>3N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications

文件：498.37 Kbytes 頁(yè)數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：3N；Package：DSBGA；HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1? Relative Humidity Accuracy ±2% (typical) ? Temperature Accuracy ±0.2°C (typical) ? Excellent Stability at High Humidity ? 14 Bit Measurement Resolution ? 100 nA Sleep Mode Current ? Average Supply Current: – 710 nA @ 1 sps, 11 bit RH Measurement – 1.3 μA @ 1 sps, 11 bit R

文件：1.00243 Mbytes 頁(yè)數(shù)：29 Pages

TI

德州儀器

絲?。?strong>3N；Package：DSBGA；HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1? Relative Humidity Accuracy ±2% (typical) ? Temperature Accuracy ±0.2°C (typical) ? Excellent Stability at High Humidity ? 14 Bit Measurement Resolution ? 100 nA Sleep Mode Current ? Average Supply Current: – 710 nA @ 1 sps, 11 bit RH Measurement – 1.3 μA @ 1 sps, 11 bit R

文件：1.00243 Mbytes 頁(yè)數(shù)：29 Pages

TI

德州儀器

絲?。?strong>3N；Package：DSBGA；HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor

1 Features 1? Relative Humidity Accuracy ±2% (typical) ? Temperature Accuracy ±0.2°C (typical) ? Excellent Stability at High Humidity ? 14 Bit Measurement Resolution ? 100 nA Sleep Mode Current ? Average Supply Current: – 710 nA @ 1 sps, 11 bit RH Measurement – 1.3 μA @ 1 sps, 11 bit R

文件：1.00243 Mbytes 頁(yè)數(shù)：29 Pages

TI

德州儀器

絲?。?strong>3N；Package：SOT-523；PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT3904T). ● Low Current (Max:-200mA). ● Low Voltage(Max:-40V). APPLICATIONS ● Ideal for medium power amplification and switching.

文件：167.54 Kbytes 頁(yè)數(shù)：4 Pages

BILIN

銀河微電

絲?。?strong>3N；Package：SOT-523；PNP Transistors

■ Features ● Epitaxial Planar Die Construction ● Also Available in Lead Free Version ● Complementary to MMBT3904T

文件：953.09 Kbytes 頁(yè)數(shù)：2 Pages

KEXIN

科信電子

絲印：3N；Package：SOT-523；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version

文件：207.99 Kbytes 頁(yè)數(shù)：2 Pages

GWSEMI

唯圣電子

絲?。?strong>3N；Package：DFN2020D-6；55V, 2A PNP/PNP low VCEsat (BISS) double transistor

1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits ? Very low collector-emitter saturati

文件：284.78 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIA

安世