絲印：3H；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideally suited for automatic insertion For Switching and AF Amplifier Applications

文件：344.44 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲?。?strong>3H；Package：SOT323；PNP general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 65 V).

文件：236.73 Kbytes 頁數(shù)：11 Pages

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安世

絲?。?strong>3H；Package：SOT323；65 V, 100 mA PNP general-purpose transistors

1. General description PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEDEC NPN complement BC856W-Q BC846W-Q BC856AW-Q BC846AW-Q BC856BW-Q BC846BW-Q BC857W-Q BC847W-Q BC

文件：229.32 Kbytes 頁數(shù)：13 Pages

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安世

絲?。?strong>3H；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>3H；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>3H；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 200mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：537.22 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>3H；Package：SOT23；50 V, 2 A PNP low VCEsat (BISS) transistor

FEATURES ?Low collector-emitter saturation voltage VCEsat ?High collector current capability: IC and ICM ?Higher efficiency leading to less heat generation ?Reduced printed-circuit board requirements ?Cost effective alternative to MOSFETs in specific applications. APPLICATIONS ?Power mana

文件：329.89 Kbytes 頁數(shù)：8 Pages

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絲印：3H；Package：SOD882-S1；ESD protection device

1. General description Bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882-S1) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits ? B

文件：225.74 Kbytes 頁數(shù)：11 Pages

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絲印：3H；Package：SOT457；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Logic-level compatible ? Very fast switching ? Electr

文件：264.74 Kbytes 頁數(shù)：15 Pages

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絲?。?strong>3H；Package：WQFN-20L；Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs

Features Support Connected Standby Mode for Ultrabook CCRCOT Control with 100ns Load Step Response PWM Maximum Duty Ratio > 98 5V to 25V Input Voltage Range Dual Adjustable Output : ? CH1 : 2V to 5.5V ? CH2 : 2V to 4V 5V/3.3V LDOs with 100mA Output Current 1 Accuracy on 3.3V LDO Output O

文件：273.24 Kbytes 頁數(shù)：22 Pages

RICHTEK

立锜科技