| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:3404B;Package:3404B;30V N-Channel Enhancement Mode MOSFET Description The DMG3402LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52747 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description The DMN3028LQ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52747 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description The IRLML0030 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52747 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The IRLML6346 uses advanced trench technology General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52748 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description The NVTR4503N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52746 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV15ENEA General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.57297 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印:3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV19XNEA General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52751 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology Si2300DS General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.5275 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲?。?strong>3404B;Package:SOT-23;30V N-Channel Enhancement Mode MOSFET Description The SQ2348ES uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =4.2A RDS(ON) 文件:2.52746 Mbytes 頁數:5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印:3404B;Package:3404B;30V N-CHANNEL ENHANCEMENT MODE MOSFET Application Lithium battery protection Wireless impact Mobile phone fast charging 文件:1.82526 Mbytes 頁數:5 Pages | YFWDIODE 佑風微 | YFWDIODE |
詳細參數
- 型號:
3404B
- 制造商:
SHENZHENFREESCALE
- 制造商全稱:
ShenZhen FreesCale Electronics. Co., Ltd
- 功能描述:
Automotive N-Channel 30 V(D-S) 175 ?°C MOSFET
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
SOT-23 |
20300 |
VISHAY/威世原裝特價SQ2348ES即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
VISHAY/威世 |
23+ |
SOT-23 |
100586 |
全新原廠原裝正品現貨,可提供技術支持、樣品免費! |
詢價 | ||
VISHAY |
2024+ |
N/A |
70000 |
柒號只做原裝 現貨價秒殺全網 |
詢價 | ||
Vishay(威世) |
23+ |
NA |
20094 |
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
Vishay(威世) |
2021/2022+ |
標準封裝 |
6500 |
原廠原裝現貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
24+ |
N/A |
82000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
VISHAY |
24+ |
N/A |
8000 |
全新原裝正品,現貨銷售 |
詢價 | ||
Vishay(威世) |
24+ |
N/A |
11800 |
可配單提供樣品 |
詢價 | ||
Vishay(威世) |
25+ |
N/A |
8800 |
公司只做原裝,詳情請咨詢 |
詢價 | ||
原廠 |
24+ |
N/A |
10000 |
只做現貨 |
詢價 |
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