絲?。?a target="_blank" title="Marking" href="/3401/marking.html">3401；Package：SOT-23；Plastic-Encapsulate MOSFETS

Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

文件：843.06 Kbytes 頁數(shù)：5 Pages

GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/3401/marking.html">3401；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G3401L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：803.56 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features ? VDS=30V RDS(ON)=33mΩ @VGS=4.5V, ID=5A RDS(ON)=52mΩ @VGS=2.5V, ID=4A ? Low on-resistance ? Low gate charge ? Excellent thermal and electrical capabilities ? Compact and low profile SOT-23 package

文件：657.42 Kbytes 頁數(shù)：7 Pages

CYSTEKEC

全宇昕科技

絲?。?a target="_blank" title="Marking" href="/3400e/marking.html">3400E；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. General Features ● VDS = 30

文件：243.55 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/3400x/marking.html">3400X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

文件：303.47 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/3400xy/marking.html">3400XY；Package：SOT23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

文件：283.15 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/3401by/marking.html">3401BY；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.4A RDS(ON)

文件：270.41 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲印：3401EX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3401E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = -30V,ID = -4.4A RDS(ON

文件：620.17 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲印：3402；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features Lead free product is acquired Surface mount package

文件：1.03464 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/3400a/marking.html">3400A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 30V,ID = 5.8A RDS(ON)

文件：876.19 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際