絲?。?strong>33P；Package：DFN1610-2；1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：501.59 Kbytes 頁數(shù)：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

應(yīng)能江蘇應(yīng)能微電子股份有限公司

絲印：33P；Package：DFN1610-2；Ultra Low Capacitance Bi-Directional TVS Diode Array

文件：1.1991 Mbytes 頁數(shù)：4 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/33psep/marking.html">33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1? VID V62/18617 ? Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) ? Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33psep/marking.html">33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1? VID V62/18617 ? Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) ? Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33psep/marking.html">33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1? VID V62/18617 ? Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) ? Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33psep/marking.html">33PSEP；Package：SOIC；SN55HVD233-SEP 3.3-V Radiation Hardened CAN Transceiver in Space Enhanced Plastic

1 Features 1? VID V62/18617 ? Radiation Hardened – Single Event Latch-up (SEL) Immune to 43 MeV-cm2/mg at 125°C – ELDRS Free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for Every Wafer Lot up to 20 krad(Si) ? Space Enhanced Plastic – Controlled Baseline – Gold Wire – NiPdAu Lead Fin

文件：758.11 Kbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33pq/marking.html">33PQ；Package：SOT-23；TPS382x-xx-Q1 Voltage Monitor With Watchdog Timer

1 Features ? Qualified for automotive applications ? AEC-Q100 Qualified With the Following Results: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B ? ESD protection exceeds 2000V Per MIL-STD-883, Method 3015; usi

文件：986.85 Kbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33pq/marking.html">33PQ；Package：SOT-23；TPS382x-xx-Q1 Voltage Monitor With Watchdog Timer

1 Features ? Qualified for automotive applications ? AEC-Q100 Qualified With the Following Results: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B ? ESD protection exceeds 2000V Per MIL-STD-883, Method 3015; usi

文件：986.85 Kbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33ph/marking.html">33PH；Package：WSON；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1 Features ? Ultra-low input voltage range: 0.7 V to 2.2 V ? High efficiency: – Dropout voltage at 1 A: 70 mV (max, YBK) – Specified for VIN = VOUT +100 mV ? Excellent load transient response: – 20 mV for ILOAD = 3 mA to 600 mA in 20 μs ? Accuracy over load, line, and temperature: 1 ? High

文件：3.92497 Mbytes 頁數(shù)：38 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/33ph/marking.html">33PH；Package：WSON；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1 Features ? Ultra-low input voltage range: 0.7 V to 2.2 V ? High efficiency: – Dropout voltage at 1 A: 70 mV (max, YBK) – Specified for VIN = VOUT +100 mV ? Excellent load transient response: – 20 mV for ILOAD = 3 mA to 600 mA in 20 μs ? Accuracy over load, line, and temperature: 1 ? High

文件：3.92588 Mbytes 頁數(shù)：38 Pages

TI

德州儀器