絲?。?strong>339；N-Channel 2.5V Specified PowerTrench? MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications ? DC/DC con

文件：191.53 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?strong>339；Package：SOT-23；N-Channel 2.5 V (D-S) MOSFET

General Description This N-Channel 2.5V specified MOSFET is has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Load switch Features VDS (V) = 20V RDS(ON)

文件：322.25 Kbytes 頁(yè)數(shù)：5 Pages

EVVOSEMI

翊歐

絲?。?strong>339；Package：SO14；Low-power quad voltage comparators

Features ? Wide single supply voltage range or dual supplies for all devices: +2 to +36 V or ±1 V to ±18 V ? Very low supply current (1.1 mA) independent of supply voltage ? Low input bias current: 25 nA typ ? Low input offset current: ±5 nA typ ? Low input offset voltage: ±1 mV typ ? Inp

文件：776.17 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：339；Package：TSSOP14；Low-power quad voltage comparators

Features ? Wide single supply voltage range or dual supplies for all devices: +2 to +36 V or ±1 V to ±18 V ? Very low supply current (1.1 mA) independent of supply voltage ? Low input bias current: 25 nA typ ? Low input offset current: ±5 nA typ ? Low input offset voltage: ±1 mV typ ? Inp

文件：776.17 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>339；Package：SSOP-B14；Ground Sense Comparator

文件：958.8 Kbytes 頁(yè)數(shù)：56 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/339b/marking.html">339B；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES ? For surface mounted applications in order to optimize board space. ? Low profile package ? Built-in strain relief ? Glass passivated junction ? Low inductance ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? Pb free product are available : 99 Sn

文件：218.38 Kbytes 頁(yè)數(shù)：3 Pages

FS

絲印：339B；Package：SMB；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.71 Kbytes 頁(yè)數(shù)：6 Pages

WTE

Won-Top Electronics

絲?。?a target="_blank" title="Marking" href="/339b/marking.html">339B；Package：DO-214AA；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.47176 Mbytes 頁(yè)數(shù)：7 Pages

DAESAN

絲?。?a target="_blank" title="Marking" href="/339b/marking.html">339B；Package：SMC；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：106.62 Kbytes 頁(yè)數(shù)：6 Pages

WTE

Won-Top Electronics

絲?。?a target="_blank" title="Marking" href="/339n20n6/marking.html">339N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61

文件：1.15575 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌