絲?。?strong>318；Package：SOD-323；1-Line Uni-directional TVS Diode

Features 350W peak pulse power ( 8/20μs) Protects one data or power line Ultra low leakage：nA level Operating voltage：18V Ultra low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV RoHS Compliant – IEC6

文件：2.52054 Mbytes 頁(yè)數(shù)：4 Pages

SY

順燁電子

絲印：318；Package：SOT-723；N-Channel Enhancement MOSFET

文件：540.6 Kbytes 頁(yè)數(shù)：4 Pages

SECOS

喜可士

絲印：318131；WE-AGDT Auxiliary Gate Drive Transformer

General Information: Operating Temperature -40 up to +130 °C Storage Conditions (in original packaging)

文件：701.92 Kbytes 頁(yè)數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?a target="_blank" title="Marking" href="/318207/marking.html">318207；WE-AGDT Auxiliary Gate Drive Transformer

Operating Temperature -40 up to +130 °C Storage Conditions (in original packaging)

文件：485.72 Kbytes 頁(yè)數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?a target="_blank" title="Marking" href="/318208/marking.html">318208；WE-AGDT Auxiliary Gate Drive Transformer

General Information: Operating Temperature -40 up to +130 °C Storage Conditions (in original packaging)

文件：701.06 Kbytes 頁(yè)數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?a target="_blank" title="Marking" href="/318616/marking.html">318616；WE-AGDT Auxiliary Gate Drive Transformer

General Information: Operating Temperature -40 up to +130 °C Storage Conditions (in original packaging)

文件：703.4 Kbytes 頁(yè)數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?a target="_blank" title="Marking" href="/318/marking.html">318*；Package：SOT-25；Low IQ, Low Dropout 300mA Fixed Voltage Regulator

General Description The APL5301/2 series are micropower, low noise, low dropout linear regulators, which operate from 3V to 6V input voltage and deliver up to 300mA. Typical dropout voltage is only 260mV at 300mA loading. Designed for use in battery-powered system, the low 50uA quiescent current

文件：193.26 Kbytes 頁(yè)數(shù)：19 Pages

ANPEC

茂達(dá)電子

絲?。?a target="_blank" title="Marking" href="/3184/marking.html">3184；Package：DIP8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 頁(yè)數(shù)：26 Pages

ONSEMI

安森美半導(dǎo)體

絲印：3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 頁(yè)數(shù)：26 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/3184/marking.html">3184；Package：SMT8-Pin；3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Features ■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V ■ Guaranteed operating temperature range of -40°C to +100°C ■ 3A peak output current for medium power MOSFET/IGBT ■ Fast switching speed – 210ns max. propagation delay – 65ns max pulse width d

文件：889.91 Kbytes 頁(yè)數(shù)：26 Pages

ONSEMI

安森美半導(dǎo)體