RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 3135GN-200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.5 dB gain, 200 Watts of pulsed RF output power at 200uS pulse width, 10% duty factor across the 3100 – 3500 MHz band. This hermetically sealed transistor is designed for S-B

Microchip

微芯科技

連接器附件

Mill-Max

美信

類別：電纜，電線 單芯電纜（連接線） 描述：HOOK-UP STRND 8AWG BLACK 100'

ALPHAWIRE