絲印：3100；Package：DO-214AA；SMD Schottky Barrier Diode

Features - AEC-Q101 Qualified. - High surge current capability. - Low reverse current. - High current capability.

文件：481.22 Kbytes 頁數(shù)：4 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/310019/marking.html">310019；WE-PoE Power over Ethernet Transformer

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：546.05 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/310020/marking.html">310020；WE-PoE Power over Ethernet Transformer

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：545.84 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/3100r17/marking.html">3100R17；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features ? Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver ? 100V continuous, 120V pulsed voltage rating ? Interated high-side level shift and bootstrap ? Two LMG3100 can form a half-bridge – No external level shifter needed ? 5V external bias power supply ? Sup

文件：1.63277 Mbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/3100r4/marking.html">3100R4；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features ? Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver ? 100V continuous, 120V pulsed voltage rating ? Interated high-side level shift and bootstrap ? Two LMG3100 can form a half-bridge – No external level shifter needed ? 5V external bias power supply ? Sup

文件：1.15872 Mbytes 頁數(shù)：30 Pages

TI

德州儀器

絲印：3100R4；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features ? Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver ? 100V continuous, 120V pulsed voltage rating ? Interated high-side level shift and bootstrap ? Two LMG3100 can form a half-bridge – No external level shifter needed ? 5V external bias power supply ? Sup

文件：1.63277 Mbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/3100l10/marking.html">3100L10；Package：TESOP-8；Dual N-Ch Enhancement Mode MOSFET

文件：375.42 Kbytes 頁數(shù)：8 Pages

KODENSHI

可天士

絲?。?a target="_blank" title="Marking" href="/3100l10/marking.html">3100L10；Package：TESOP-8M；Dual N-Ch Enhancement Mode MOSFET

文件：398.49 Kbytes 頁數(shù)：8 Pages

KODENSHI

可天士

絲印：3100L10；Package：TESOP-8M；N-Ch Enhancement Mode MOSFET

文件：398.2 Kbytes 頁數(shù)：8 Pages

KODENSHI

可天士

12 Gbps PCIe Gen3 SAS/SATA RAID Adapters

Highlights ? maxCache 4.0 caching software ? RAID levels: 0, 1, 5, 6, 10, 50, 60, 1 ADM and 10 ADM ? Supports simultaneous use of RAID and raw devices (mixed mode) ? Fifth-generation Zero-Maintenance Cache Protection (ZMCP) ? Up to 24 native SAS/SATA ports in a LP/MD2 design ? 12 Gbps and 6

文件：1.31901 Mbytes 頁數(shù)：2 Pages

MICROCHIP

微芯科技