Fast Switching

文件：64.93 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-Channel 100-V (D-S) MOSFET

文件：982.72 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

電源管理類(lèi)

FM

富滿微

絲?。?a target="_blank" title="Marking" href="/30n100/marking.html">30N100；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：362.66 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/30n100/marking.html">30N100；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Halogen-free RDS(ON)

文件：727.27 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/30n10f7/marking.html">30N10F7；Package：TO-220；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features ? Among the lowest RDS(o

文件：1.05035 Mbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/30n100/marking.html">30N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：318.35 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲印：30N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：332.83 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/30n10f7/marking.html">30N10F7；Package：DPAK；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

文件：1.06865 Mbytes 頁(yè)數(shù)：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體