30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

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UTC

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絲?。?a target="_blank" title="Marking" href="/30n06a/marking.html">30N06A；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

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絲印：30N06A；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

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翊歐

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

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60V, 30A N-CHANNEL POWER MOSFET

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Fast Switching

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ISC

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isc N-Channel MOSFET Transistor

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ISC

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N-Channel 60 V (D-S) MOSFET

文件：1.31385 Mbytes 頁數：9 Pages

VBSEMI

微碧半導體

N-Channel 6 0-V (D-S) MOSFET

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VBSEMI

微碧半導體

60V, 30A?? N-CHANNEL?? POWER MOSFET

The UTC?30N06?is a low voltage power MOSFET and is? designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET?is usually used at automotiveapplications in power supplies, high efficient DC ? RDS(ON) = 40m?@VGS = 10 V \n? Ultra low gate charge ( typical 20nC )?? \n? Low reverse transfer Capacitance ( CRSS = typical 80 pF ) \n? Fast switching capability \n? Avalanche energy specified \n? Improved dv/dt capability;

UTC

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