絲?。?strong>3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92605 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲印：3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.94103 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.94154 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>3055；Package：SOT-23-3；N-Channel MOSFET

文件：609.73 Kbytes 頁數(shù)：3 Pages

KEXIN

科信電子

絲?。?a target="_blank" title="Marking" href="/3055l/marking.html">3055L；Package：SOT-223；N-Channel Enhancement Mode MOSFET

文件：873.32 Kbytes 頁數(shù)：4 Pages

KEXIN

科信電子

絲印：3055L；Package：SOT-223；Power MOSFET 3.0 A, 60 V, Logic Level, N??hannel SOT??23

文件：80.8 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/3055l/marking.html">3055L；Package：SOT-223；3.0 A, 60 V, Logic Level, N.Channel SOT??23

文件：79.23 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲印：3055L；Package：SOT-223；Power MOSFET

文件：81.84 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/3055l/marking.html">3055L；Package：SOT-223；N-Channel Enhancement Mode MOSFET

文件：370.28 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

文件：92.1 Kbytes 頁數(shù)：2 Pages

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