Low voltage fast-switching NPN power transistor

Description The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160. Features ? Very low col

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STMICROELECTRONICS

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低壓快速切換NPN功率晶體管

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.\n\n The complementary PNP is the 2STR2160. ? Very low collector-emitter saturation voltage \n? High current gain characteristic \n? Fast switching speed \n? Miniature SOT-23 plastic package for surface mounting circuits;

ST

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Package：TO-236-3，SC-59，SOT-23-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 60V 1A SOT23-3

STMICROELECTRONICS

意法半導(dǎo)體