JUNCTION FIELD EFFECT TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD.FEATURES\n● High Voltage VGDO -50 V\n● High |yfs| |yfs| = 12 mS TYP. ● High Voltage VGDO -50 V\n● High |yfs| |yfs| = 12 mS TYP.;

Renesas

瑞薩

2SK940

L2-π-MOS III HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE APPLICATIONS. DC-DC CONVERTER APPLICATIONS.

文件：65.489 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

2SK941

文件：63.77 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

CANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION The 25K846 is N-channel MOS Field Effect Power Transistor designed for switching power supplies, DC-DC converters. FEATURES - Suitable for switching power supplies, actuater controls, and pulse circuits. - Low Ros(on) - No second breakdown - Isolated mold package

文件：3.36443 Mbytes 頁數(shù)：6 Pages

RENESAS

瑞薩

N-CHANNLEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power Applications ● UPS ● DC-DC converters ● General purpose power amplifier

文件：130.9 Kbytes 頁數(shù)：4 Pages

FUJI

富士通

N-CHANNLEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power Applications ● UPS ● DC-DC converters ● General purpose power amplifier

文件：130.9 Kbytes 頁數(shù)：4 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.71 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：348.27 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● Hig voltage Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：132.27 Kbytes 頁數(shù)：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● Hig voltage Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

文件：132.27 Kbytes 頁數(shù)：4 Pages

FUJI

富士通