N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES ? Compact package ? High forward transfer admittance | yfs | = 1200 μS TYP. (VDS = 5 V, ID = 0 μA) ? Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) ? Includes diode and high resistance at G - S

文件：38.32 Kbytes 頁(yè)數(shù)：8 Pages

NEC

瑞薩

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 頁(yè)數(shù)：2 Pages

NEC

瑞薩

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES ? Compact package ? High forward transfer admittance | yfs | = 1200 μS TYP. (VDS = 5 V, ID = 0 μA) ? Low capacitance Ciss = 4.5 pF (VDS =

文件：204.98 Kbytes 頁(yè)數(shù)：10 Pages

RENESAS

瑞薩

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION\nThe 2SK660 is suitable for converter of ECM.FEATURES\n? Compact package\n? High forward transfer admittance\n? | yfs | = 1200 μS TYP. (VDS = 5 V, ID = 0 μA)\n? Low capacitance\n? Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)\n? Includes diode and high resistance at G - S ? Compact package\n? High forward transfer admittance\n? | yfs | = 1200 μS TYP. (VDS = 5 V, ID = 0 μA)\n? Low capacitance\n? Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)\n? Includes diode and high resistance at G - S?;

Renesas

瑞薩