N CHANNEL MOS FIELD EFECT POWER TRANSISTOR

DESCRIPTION The 2SK659 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp drivers. FEATURES ● 4 V Gate Drive - Logic level - ● Low RDS(on) ● No Second Breakdown

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NEC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

Silicon N-Channel MOS FET

For switching\n■ ●High-speed switching\n●Allowing to supply with the radial taping;

Panasonic

松下

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

Renesas

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