SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES ? Low on-state resistance RDS(on

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無(wú)錫固電

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES ? Low on-state resistance RDS(on

文件：261.38 Kbytes 頁(yè)數(shù)：9 Pages

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SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES ? Low on-state resistance RDS(on

文件：261.38 Kbytes 頁(yè)數(shù)：9 Pages

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SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES ? Low on-state resistance RDS(on)1 = 6.0 m

文件：342.26 Kbytes 頁(yè)數(shù)：9 Pages

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SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES ? Low on-state resistance RDS(on)1 = 6.0 m

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N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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SANYO

三洋

N-Channel 20-V (D-S)175 C MOSFET

文件：916.73 Kbytes 頁(yè)數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES\n? Low on-state resistance\n?? RDS(on)1 = 7.8 mΩ MA ? Low on-state resistance\n?? RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)\n?? RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)\n? Low total gate charge\n?? QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)\n? 4.5 V drive available\n? Avalanche capability ratings;

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