MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) ? Low input capacitance Ciss = 5300 pF TYP.

文件：1.25804 Mbytes 頁(yè)數(shù)：10 Pages

RENESAS

瑞薩

isc N-Channel MOSFET Transistor

文件：269.85 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

N-Channel 60 V (D-S) MOSFET

文件：1.28923 Mbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n?Low on-state resistance\n? RDS(on)= 10 mΩMAX. (VGS= 10 V, ID= 42 A)\n?Low input capacitance\n? Ciss= 5300 pF TYP. ?Low on-state resistance\n? RDS(on)= 10 mΩMAX. (VGS= 10 V, ID= 42 A)\n?Low input capacitance\n? Ciss= 5300 pF TYP.;

Renesas

瑞薩

N-channel MOSFET 60 V, 84 A, 10 mΩ

Description The 2SK4145A is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) ? Low input capacitance Ciss = 3310 pF TYP. (VDS = 10 V, VGS = 0 V) ? High current ID(DC) =

文件：400.77 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

N-channel MOSFET 60 V, 84 A, 10 mΩ

Description The 2SK4145A is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Low on-state resistance RDS (on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) ? Low input capacitance Ciss = 3310 pF TYP. (VDS = 10 V, VGS = 0 V) ? High current ID(DC) =

文件：400.77 Kbytes 頁(yè)數(shù)：8 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) ? Low input capacitance Ciss = 5300 pF TYP.

文件：1.25804 Mbytes 頁(yè)數(shù)：10 Pages

RENESAS

瑞薩