絲印：K3797；Package：SC-67；Silicon N-Channel MOS Type

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) ? High forward transfer admittance: |Yfs| = 7.5 S (typ.) ? Low leakage current: IDSS = 100 μA (VDS = 600 V) ? Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/k3797/marking.html">K3797；Package：SC-67；Switching Regulator Applications

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絲?。?a target="_blank" title="Marking" href="/k3797/marking.html">K3797；Package：SC-67；Silicon N-Channel MOS Type Switching Regulator Applications

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Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID 13 A \nPower Dissipation PD 50 W \nDrain-Source voltage VDSS 600 V ;

Toshiba

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Silicon N-Channel MOS Type Switching Regulator Applications

文件：209.86 Kbytes 頁數(shù)：6 Pages

TOSHIBA

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Switching Regulator Applications

文件：191.06 Kbytes 頁數(shù)：6 Pages

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東芝