Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 1.9 ? (typ.) ? High forward transfer admittance: |Yfs| = 1.0 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) ? Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：250.64 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) ? High forward transfer admittance: |Yfs| = 3.5S (typ.) ? Low leakage current: IDSS = 100 μ A (VDS = 500 V) ? Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

文件：92.57 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 850mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：333.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS??

Switching Regulator Applications ● Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) ● High forward transfer admittance: |Yfs| = 6.5S (typ.) ● Low leakage current: IDSS = 100 μ A (VDS = 500 V) ● Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

文件：91.1 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

文件：45.43 Kbytes 頁數(shù)：1 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：397.46 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：329.62 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

文件：45.43 Kbytes 頁數(shù)：1 Pages

HITACHIHitachi Semiconductor

日立日立公司

N-CHANNEL SILICON POWER MOSFET

文件：131.97 Kbytes 頁數(shù)：4 Pages

FUJI

富士通

Relay Drive, DC??C Converter

文件：139.7 Kbytes 頁數(shù)：3 Pages

TOSHIBA

東芝