N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications ? Suitable for use as first stage for equalizer and MC head amplifiers. ? High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) ? High breakdown voltage: VGDS = ?40 V ? Super low noise: NF = 1.0dB (typ.)

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TOSHIBA

東芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

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TOSHIBA

東芝

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

文件：757.97 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

Toshiba

東芝

Built-in gate protection diode

Features ? Low on-state resistance 5.0mΩ VGS=10V ? Built-in gate protection diode ? SMD PKG Applications ? DC－ DC converter ? Mortar drive

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SANKEN

三墾

Low on-resistance

■Features ? Low on-resistance ? Built-in gate protection diode ? Avalanche energy capability guaranteed ■Applications ? Electric power steering ? High current switching

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SANKEN

三墾

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：398.67 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? High voltage: VDSS = 250 V ? Gate voltag

文件：251.05 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? High voltage: VDSS = 250 V ? Gate voltage rating: ±30 V ? Low on-stat

文件：166.77 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

MOS Field Effect Transistor

Features High voltage: VDSS = 250 V Gate voltage rating: ± 30 V Low on-state resistance RDS(on) = 0.58? MAX. (VGS = 10 V, ID = 4.5 A) Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) Built-in gate protection diode

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KEXIN

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