MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

文件：134.91 Kbytes 頁數(shù)：1 Pages

TOSHIBA

東芝

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

文件：217.95 Kbytes 頁數(shù)：4 Pages

TOSHIBA

東芝

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

文件：648.25 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

Toshiba

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5 V driv

文件：60.9 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw

文件：195.58 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Typical ESD Protection 2000 V HBM ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Portable Devices - Load Switch - Battery Switch ? Load Switch for Motors, Relays and

文件：1.93612 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw

文件：272.73 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. ???????The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? 2.5

文件：139.77 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩