isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=8A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=8A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：398.15 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? High voltage: VDSS = 200 V ? Gate volta

文件：250.98 Kbytes 頁(yè)數(shù)：10 Pages

RENESAS

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? High voltage: VDSS = 200 V ? Gate voltage rating: ±30 V ? Low on-state resistance

文件：166.72 Kbytes 頁(yè)數(shù)：8 Pages

NEC

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