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                >2SK34>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    2SK3433-S
    MOS FIELD EFFECT TRANSISTOR
    
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
? Super low on-state resistance:
RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A)
? L
    文件：213.51 Kbytes 頁數(shù)：10 Pages
    RENESAS
    瑞薩
    

    2SK3433-Z
    MOS FIELD EFFECT TRANSISTOR
    
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
? Super low on-state resistance:
RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A)
? L
    文件：213.51 Kbytes 頁數(shù)：10 Pages
    RENESAS
    瑞薩
    

    2SK3433-Z
    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
    
DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
? Super low on-state resistance:
   RDS(on)1= 26 m? MAX. (VGS= 10 V, ID= 20 A)
   RDS(on)2= 41 m? MAX. (VGS= 4.0 V, ID= 20 A)
? Low Ciss: Ciss= 1500 pF TYP.
? Built-in
    文件：48.28 Kbytes 頁數(shù)：4 Pages
    NEC
    瑞薩
    

    2SK3433-ZJ
    MOS FIELD EFFECT TRANSISTOR
    
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
? Super low on-state resistance:
RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A)
? L
    文件：213.51 Kbytes 頁數(shù)：10 Pages
    RENESAS
    瑞薩
    

    2SK3434
    MOS FIELD EFFECT TRANSISTOR
    
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
? Super low on-state resistance
RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A)
RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A)
? Lo
    文件：214.11 Kbytes 頁數(shù)：10 Pages
    RENESAS
    瑞薩
    

    2SK3434
    MOS Field Effect Transistor
    
Features

● Super low on-state resistance:

    RDS(on)1= 20m? MAX. (VGS=10V,ID= 24A)

    RDS(on)2=31m? MAX. (VGS=4V,ID= 24A)

● Low Ciss: Ciss =2100 pF TYP.

● Built-in gate protection diode
    文件：45.08 Kbytes 頁數(shù)：1 Pages
    KEXIN
    科信電子
    

    2SK3434
    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
    
DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
? Super low on-state resistance:
   RDS(on)1= 20 m?MAX. (VGS= 10 V, ID= 24 A)
   RDS(on)2= 31 m?MAX. (VGS= 4.0 V, ID= 24 A)
? Low Ciss: Ciss= 2100 pF TYP.
? Built-in g
    文件：48.68 Kbytes 頁數(shù)：4 Pages
    NEC
    瑞薩
    

    2SK3434-S
    SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
    
DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
? Super low on-state resistance:
   RDS(on)1= 20 m?MAX. (VGS= 10 V, ID= 24 A)
   RDS(on)2= 31 m?MAX. (VGS= 4.0 V, ID= 24 A)
? Low Ciss: Ciss= 2100 pF TYP.
? Built-in g
    文件：48.68 Kbytes 頁數(shù)：4 Pages
    NEC
    瑞薩
    

    2SK3434-S
    MOS FIELD EFFECT TRANSISTOR
    
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
? Super low on-state resistance
RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A)
RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A)
? Lo
    文件：214.11 Kbytes 頁數(shù)：10 Pages
    RENESAS
    瑞薩
    

    2SK3434-Z
    MOS FIELD EFFECT TRANSISTOR
    
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES
? Super low on-state resistance
RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A)
RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A)
? Lo
    文件：214.11 Kbytes 頁數(shù)：10 Pages
    RENESAS
    瑞薩
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • RDS (ON) (mohm) max. @10V or 8V：
      15
    • Downloadable：
      SPICE
    • Ciss (pF) typ.：
      3200
    • Package Type：
      MP-3/TO-251
    • Vgs (off) (V) max.：
      2.5
    • Nch/Pch：
      Nch
    • VGSS (V)：
      20
    • Number of Channels：
      Single
    • Pch (W)：
      40
    • Automotive：
      YES
    • Application：
      Low Voltage General Switching
    • VDSS (V) max.：
      60
    • Mounting Type：
      Through Hole
    • ID (A)：
      36
    • QG (nC) typ.：
      61
    • RDS (ON) (mohm) max. @4V or 4.5V：
      22
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價格
    
                
    



    MIT
    		

    24+
    		

    		

    3005
    		

    		
詢價
    

    



    TOSHIBA
    		

    24+/25+
    		

    		

    1996
    		

    原裝正品現(xiàn)貨庫存價優(yōu)
    		
詢價
    

    



    TOS
    		

    13+
    		

    TO-92S
    		

    561238
    		

    原裝分銷
    		
詢價
    

    



    MITSUBIS
    		

    23+
    		

    TO-57
    		

    350
    		

    專營高頻管模塊,全新原裝!
    		
詢價
    

    



    TOSHIBA
    		

    15+
    		

    TO-220
    		

    11560
    		

    全新原裝,現(xiàn)貨庫存,長期供應(yīng)
    		
詢價
    

    



    NEC
    		

    03+
    		

    TO263
    		

    2145
    		

    全新原裝進(jìn)口自己庫存優(yōu)勢
    		
詢價
    

    



    NEC
    		

    24+
    		

    TO-220F
    		

    3000
    		

    全新原裝環(huán)?，F(xiàn)貨
    		
詢價
    

    



    NEC
    		

    16+
    		

    TO-220
    		

    10000
    		

    全新原裝現(xiàn)貨
    		
詢價
    

    



    NEC
    		

    24+
    		

    SOT-263
    		

    211
    		

    原裝現(xiàn)貨假一罰十
    		
詢價
    

    



    HIT
    		

    23+
    		

    SOP28L
    		

    5000
    		

    原裝正品,假一罰十
    		
詢價
    

            
    
        
    
        
    更多2SK34供應(yīng)商
            更新時間2026-1-22 16:30:00
        
    
        
    
          
    
            
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