TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)

Switching Regulator, DC-DC Converter and Motor Drive Applications ? 4-V gate drive ? Low drain-source ON resistance: RDS (ON) = 0.08 ?(typ.) ? High forward transfer admittance: ?Yfs? = 17 S (typ.) ? Low leakage current: IDSS = 100 μA (VDS = 150 V) ? Enhancement mode: Vth = 0.8~2.0 V (VDS = 10

文件：216.79 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

文件：168.44 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Power MOSFET (N-ch single 60V VDSS 150V)

Polarity：N-ch\nGeneration：L2-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 18 A \nPower Dissipation PD 100 W \nDrain-Source voltage VDSS 150 V ;

Toshiba

東芝

Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

文件：168.44 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝