| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Switching Features ? Low on-resistance RDS = 1.6 ? typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 ? typ. (VGS = 2.5 V , ID = 50 mA) ? 2.5 V gate drive device. ? Small package (CMPAK) 文件：40.57 Kbytes 頁數(shù)：8 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N Channel MOS FET High Speed Switching Silicon N Channel MOS FET High Speed Switching Features ? Low on-resistance RDS= 1.6 ?typ. (VGS= 4 V , ID= 50 mA) RDS= 2.2 ?typ. (VGS= 2.5 V , ID= 50 mA) ? 2.5 V gate drive device. ? Small package (CMPAK) 文件：157.77 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET High Speed Switching Features ? Low on-resistance RDS = 2.8 ? typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 ? typ. (at VGS = 2.5 V , ID = 10 mA) ? 2.5 V gate drive device ? Small package (SMPAK) 文件：97.07 Kbytes 頁數(shù)：12 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET High Speed Switching Features ? Low on-resistance RDS = 2.8 ? typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 ? typ. (at VGS = 2.5 V , ID = 10 mA) ? 2.5 V gate drive device ? Small package (SMPAK) 文件：39.34 Kbytes 頁數(shù)：8 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
N CHANNEL MOS SILICON TRANSISTOR N-Channel Silicon MOSFET DC / DC Converter Applications Features ? Low ON-resistance. ? 4V drive. ? Ultrahigh-speed switching. 文件：55.61 Kbytes 頁數(shù)：4 Pages | SANYO 三洋 | SANYO | ||
P- Channel Silicon MOS FET DC-DC Converter DC-DC Converter Features and Applications ? Low ON-state resistance. ? Very high - speed switching. ? 4V drive. 文件：25.23 Kbytes 頁數(shù)：2 Pages | SANYO 三洋 | SANYO | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance: RDS(on)1= 9.5 m?MAX. (VGS= 10 V, ID= 41 A) RDS(on)2= 14 m?MAX. (VGS= 4 V, ID= 41 A) ? Low Ciss: Ciss= 4650 pF TYP. ? Built-in 文件：43.27 Kbytes 頁數(shù)：4 Pages | NEC 瑞薩 | NEC | ||
MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on)1=9.5m? MAX. (VGS=10V,ID=41A) RDS(on)2=14m? MAX. (VGS=4V,ID=41A) ● Low Ciss:Ciss = 4650 pF TYP. ● Built-in gate protection diode 文件：45.05 Kbytes 頁數(shù)：1 Pages | KEXIN 科信電子 | KEXIN | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance: RDS(on)1 = 9.5mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 14mΩ MAX. (VGS = 4 V, ID = 41 A) ? Lo 文件：223.47 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3353 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance: RDS(on)1 = 9.5mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 14mΩ MAX. (VGS = 4 V, ID = 41 A) ? Lo 文件：223.47 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- Product Category：
Power MOSFET (N-ch 700V＜VDSS)
- Package name(Toshiba)：
New PW-Mold
- Recommended Product 1：
TK1P90A(Almost same package but similar characteristics)
- Recommended Product 2：
TK1Q90A(Almost same package but similar characteristics)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
23+ |
TO-252 |
6200 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
TOSHIBA |
13+ |
TO-92S |
6258 |
原裝分銷 |
詢價 | ||
NEC |
24+ |
TOP-3 |
5000 |
詢價 | |||
富士通 |
15+ |
TO-247 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
TOSHIBA |
24+/25+ |
850 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
TOSHIBA |
24+ |
TO-92S |
14090 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
FSC |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
NEC |
24+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
TOSHIBA |
2016+ |
TO-252 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FUJI |
23+ |
TO-220 |
8000 |
原裝正品,假一罰十 |
詢價 |
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