| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL MOSFET FOR SWITCHING Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ? Directly driven by a 4.5 V power source. ? Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA) 文件：98.64 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ?Gate voltage rating ±30 V 文件：234.23 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ?Gate voltage rating ±3 文件：68.11 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ?Gate voltage rating ±30 V ?Low on-state resistance RDS(on)= 0.4 ? MAX. 文件：77.11 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? Gate voltage rating ±30 V ? Low on-stat 文件：409.95 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS Field Effect Transistor Features Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available 文件：46.13 Kbytes 頁數(shù)：1 Pages | KEXIN 科信電子 | KEXIN | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? Gate voltage rating ±30 V ? Low on-stat 文件：409.95 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ?Gate voltage rating ±30 V ?Low on-state resistance RDS(on)= 0.4 ? MAX. 文件：77.11 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ?Gate voltage rating ±30 V ?Low on-state resistance RDS(on)= 0.4 ? MAX. 文件：77.11 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3109 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES ? Gate voltage rating ±30 V ? Low on-stat 文件：409.95 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS |
技術(shù)參數(shù)
- RDS (ON) (mohm) max. @10V or 8V：
2700
- Package Type：
USM/SC-75
- Ciss (pF) typ.：
20
- Nch/Pch：
Nch
- Vgs (off) (V) max.：
2.5
- Number of Channels：
Single
- VGSS (V)：
±20
- Automotive：
YES
- Pch (W)：
0.2
- VDSS (V) max.：
60
- Application：
Low Voltage General Switching
- ID (A)：
0.2
- Mounting Type：
Surface Mount
- RDS (ON) (mohm) max. @4V or 4.5V：
3200
- QG (nC) typ.：
2
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
60000 |
詢價(jià) | ||||
日立 |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | ||
VBSEMI/臺(tái)灣微碧 |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VBsemi |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
HITACHI/日立 |
2022+ |
TO-220AB |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
HITACHI/日立 |
23+ |
TO-220 |
8330 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價(jià) | ||
VBsemi |
21+ |
TO220 |
10065 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | |||
23+ |
TO-220 |
24800 |
正品原裝貨價(jià)格低 |
詢價(jià) | |||
HITACHI |
2023+ |
TO-220 |
58000 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) |
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