N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION

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NEC

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SILICON POWER MOS FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES ? High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) ? Low intermodulation distortion ? Covers all base station frequenci

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RENESAS

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N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION

FEATURES\n? High output, high gain\n? PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)\n? PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)\n? Low intermodulation distortion\n? Covers all base station frequencies such as 800-MHz PDC and GSM\n? High-reliability gold electrodes\n? Hermetic sealed package\n? Inter ? High output, high gain\n? PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)\n? PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)\n? Low intermodulation distortion\n? Covers all base station frequencies such as 800-MHz PDC and GSM\n? High-reliability gold electrodes\n? Hermetic sealed package\n? Internal matchi;

Renesas

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SOT89

TOSHIBA

東芝

上傳：深圳市智創(chuàng)誠(chéng)芯電子科技有限公司

SOT-89

TOSHIBA/東芝

上傳：深圳龐田科技有限公司