N-Channel 100-V (D-S) MOSFET

文件：773.5 Kbytes 頁(yè)數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

文件：295.19 Kbytes 頁(yè)數(shù)：5 Pages

TOSHIBA

東芝

N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

文件：92.63 Kbytes 頁(yè)數(shù)：1 Pages

TOSHIBA

東芝

Silicon N Channel MOS Type High-Power Amplifier Application

文件：107.44 Kbytes 頁(yè)數(shù)：3 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

文件：310.27 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

Silicon N Channel MOS Type High-Power Amplifier Application

文件：107.44 Kbytes 頁(yè)數(shù)：3 Pages

TOSHIBA

東芝

N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

文件：92.63 Kbytes 頁(yè)數(shù)：1 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

文件：323.08 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

MOS FIELD EFFECT TRANSISTOR , 100V, 20A/15A

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications.FEATURES\n? Low On-Resistance\n?? RDS(on)1= 0.14 ?MAX. (@ VGS= 10 V, ID= 8.0 A)\n?? RDS(on)2= 0.17 ?MAX. (@ VGS= 4 V, ID= 8.0 A)\n? Low ? Low On-Resistance\n?? RDS(on)1= 0.14 ?MAX. (@ VGS= 10 V, ID= 8.0 A)\n?? RDS(on)2= 0.17 ?MAX. (@ VGS= 4 V, ID= 8.0 A)\n? Low CissCiss= 790 pF TYP.\n? Built-in G-S Gate Protection Diodes\n? High Avalanche Capability Ratings;

Renesas

瑞薩

4V Drive Nch MOSFET

為支持現(xiàn)有客戶而生產(chǎn)的產(chǎn)品。不對(duì)新設(shè)計(jì)出售此產(chǎn)品。

ROHM

羅姆