Silicon N-Channel Junction FET

For impedance conversion in low frequency For infrared sensor ■ Features ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

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PANASONIC

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Silicon N-Channel Junction FET

For impedance conversion in low frequency\nFor infrared sensor■ ● Low gate to source leakage current, IGSS\n● Small capacitance of Ciss, Coss, Crss\n● SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.;

Panasonic

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Small-signal device - Small-signal FETs - Junction FETs

Panasonic

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Package：SC-89，SOT-490；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - JFET 描述：JFET N-CH 1MA 125MW SSMINI-3

PANASONIC

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