Silicon N-Channel Power F-MOS FET

■Features ●Avalanche energy capacity guaranteed: EAS > 20mJ ●VGSS= ±30V guaranteed ●High-speed switching: tf= 50ns ●No secondary breakdown ■Applications ●Contactless relay ●Diving circuit for a solenoid ●Driving circuit for a motor ●Control equipment ●Switching

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PANASONIC

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

isc N-Channel MOSFET Transistor

文件：323.53 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Silicon N-Channel Power F-MOS FET

■ ●Avalanche energy capacity guaranteed: EAS 20mJ\n●VGSS= ±30V guaranteed\n●High-speed switching: tf= 50ns\n●No secondary breakdown\n■Applications\n●Contactless relay\n●Diving circuit for a solenoid\n●Driving circuit for a motor\n●Control equipment\n●Switching power supply;

Panasonic

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