N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)

FM Tuner Applications VHF Band Amplifier Applications ? Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) ? High forward transfer admitance: |Yfs| = 9 mS (typ.) ? Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)

文件：221.35 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Silicon N Channel Junction Type FM Tuner Applications

文件：714.87 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

High frequency junction FET

Application Scope：FM band high frequency amplifier\nPolarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Gate Current IG 10 mA \nPower Dissipation PD 0.15 W \nGate-Drain Voltage VGDO -18 V ;

Toshiba

東芝

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)=1.5Ω MAX.@VGS=4.0V,ID=0.3A ● High switching speed

文件：46.43 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：58.84 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩

絲印：NT；Package：SC-62；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SK2110 is a N-channel MOSFET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low on-state resistance and superb switching characteristics and is

文件：302.14 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for drivin

文件：261.3 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：58.32 Kbytes 頁數(shù)：6 Pages

NEC

瑞薩

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A ● High switching speed

文件：46.56 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)=1.2 MAX.@VGS=4.0V,ID=0.5A ● High switching speed

文件：46.74 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子