N-channel MOS-FET

FAP-IIA Series >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Powe

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4.0A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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isc N-Channel MOSFET Transistor

文件：333.34 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel MOS-FET (1000V 3,6W 4A 80W)

FAP-IIA Series - High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS= ± 30V Guarantee\n- Avalanche Proof\n\nApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

N-channel MOS-FET

FAP-IIA Series >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Powe

文件：214.75 Kbytes 頁數(shù)：2 Pages

FUJI

富士通

N-channel MOS-FET

FUJI

富士通