| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon N-Channel MOS FET Application High speed power switching ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator, DC-DC converter 文件：33.66 Kbytes 頁數(shù)：6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N-Channel MOS FET Application High speed power switching ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator, DC-DC converter 文件：33.66 Kbytes 頁數(shù)：6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N Channel MOS FET Features ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switching regulator, DC-DC converter Application High speed power switching 文件：82.57 Kbytes 頁數(shù)：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET Features ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switching regulator, DC-DC converter Application High speed power switching 文件：82.57 Kbytes 頁數(shù)：7 Pages | RENESAS 瑞薩 | RENESAS | ||
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) 7.0Ω (max) ·Enhancement mode: VGS(th) = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators 文件：330.62 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon N-Channel MOS FET Features ? High breakdown voltage (VDSS = 1500V) ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator Application High speed power switching 文件：48.65 Kbytes 頁數(shù)：10 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N Channel MOS FET Features ? High breakdown voltage (VDSS = 1500 V) ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switching regulator Application High speed power switching 文件：105.71 Kbytes 頁數(shù)：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET Features ? High breakdown voltage (VDSS = 1500 V) ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switching regulator Application High speed power switching 文件：105.71 Kbytes 頁數(shù)：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N-Channel MOS FET ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator, DC-DC converter 文件：54.26 Kbytes 頁數(shù)：12 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N-Channel MOS FET ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator, DC-DC converter 文件：54.26 Kbytes 頁數(shù)：12 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI |
技術參數(shù)
- 封裝類型：
TO-220AB
- Nch/Pch：
Nch
- 通道數(shù)：
Single
- 配置[器件]：
Built-In SBD
- VDSS (V) 最大值：
900
- ID (A)：
4
- RDS (ON)(mΩ) 最大值@10V或8V：
4000
- Ciss (pF) 典型值：
740
- Vgs (off) (V) 最大值：
3
- VGSS (V)：
30
- Pch (W)：
60
- 應用：
Industrial
- 安裝類型：
Through Hole
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
CAN6 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
TOSHIBA |
24+ |
SOT23 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
TOSHIBA/東芝 |
專業(yè)鐵帽 |
CAN6 |
2500 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
TOSHIBA/東芝 |
專業(yè)鐵帽 |
CAN6 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
TOS |
1922+ |
CAN7 |
3000 |
絕對進口原裝現(xiàn)貨 |
詢價 | ||
T/NEC |
2023+ |
CAN |
50000 |
全新原裝現(xiàn)貨 |
詢價 | ||
TOSHIBA |
23+ |
TO-76 |
250 |
專營高頻管模塊,全新原裝! |
詢價 | ||
TOSHIBA |
24+/25+ |
1807 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
24+ |
2000 |
詢價 | |||||
TOSHIBA |
1215+ |
SOT-323 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應. |
詢價 |
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