| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon N-Channel MOS FET Application High speed power switching Features ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator, DC-DC converter 文件：33.49 Kbytes 頁數：6 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N Channel MOS FET Application High speed power switching Features ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switching regulator, DC-DC converter 文件：79.37 Kbytes 頁數：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET Application High speed power switching Features ? Low on-resistance ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switching regulator, DC-DC converter 文件：79.37 Kbytes 頁數：7 Pages | RENESAS 瑞薩 | RENESAS | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：309.39 Kbytes 頁數：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：299.41 Kbytes 頁數：2 Pages | ISC 無錫固電 | ISC | ||
Silicon N Channel MOS FET Application ? Low frequency amplifier ? High speed switching Features ? Low on-resistance ? High speed switching ? 4 V Gate drive device can be driven from 5 V source ? Suitable for switching regulator, DC-DC converter 文件：75.82 Kbytes 頁數：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features ? Low on-resistance ? High speed switching ? 4 V Gate drive device can be driven from 5 V source ? Suitable for switchingregulator, DC-DC converter 文件：28.14 Kbytes 頁數：5 Pages | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | ||
Silicon N Channel MOS FET Application ? Low frequency amplifier ? High speed switching Features ? Low on-resistance ? High speed switching ? 4 V Gate drive device can be driven from 5 V source ? Suitable for switching regulator, DC-DC converter 文件：75.82 Kbytes 頁數：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon N Channel MOS FET Application ? Low frequency amplifier ? High speed switching Features ? Low on-resistance ? High speed switching ? 4 V Gate drive device can be driven from 5 V source ? Suitable for switching regulator, DC-DC converter 文件：75.82 Kbytes 頁數：7 Pages | RENESAS 瑞薩 | RENESAS | ||
Field Effect Transistor Silicon N Channel MOS Type Features ? Low Drain-Source ON Resistance - ROS(ON) = 3.002 (Typ.) ? High Forward Transfer Admittance - Ysl = 1.5S (Typ.) ? Low Leakage Current - loss = 300μA (Max.) @ VDs= 600V ? Enhancement-Mode - Vth = 2.0 ~ 4.0V @ Vos= 10V, b= 1mA 文件：142.9 Kbytes 頁數：2 Pages | TOSHIBA 東芝 | TOSHIBA |
技術參數
- 封裝類型：
TO-220AB
- Nch/Pch：
Nch
- 通道數：
Single
- 配置[器件]：
Built-In SBD
- VDSS (V) 最大值：
250
- ID (A)：
12
- RDS (ON)(mΩ) 最大值@10V或8V：
350
- Ciss (pF) 典型值：
1100
- Vgs (off) (V) 最大值：
3
- VGSS (V)：
30
- Pch (W)：
75
- 應用：
Industrial
- 安裝類型：
Through Hole
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
60000 |
詢價 | ||||
IR |
23+ |
模塊 |
160 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
HITACHI |
專業(yè)鐵帽 |
TO-3 |
100 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
IR |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
23+ |
20000 |
正品原裝貨價格低 |
詢價 | ||||
HIT |
99+ |
SOT89 |
2255 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
TOS |
17+ |
TO-220F |
6200 |
詢價 | |||
XI.M.Z |
16+ |
TO-220 |
10000 |
全新原裝現貨 |
詢價 | ||
sanyo |
24+ |
8858 |
公司原廠原裝現貨假一罰十!特價出售!強勢庫存! |
詢價 | |||
HIT |
25+ |
SOT-89 |
1600 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 |
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